Dr. Carlos A. Paz de Araujo

Biography

Dr. Carlos A. Paz de Araujo was born on the 9th of December, 1952, in Natal, RN, Brazil. He obtained his B.S.E.E., M.S.E.E., and Ph.D. from The University of Notre Dame, Indiana, in 1977, 1979, and 1982 respectively.

Dr. Paz de Araujo joined the Department of Electrical and Computer Engineering at the University of Colorado at Colorado Springs in 1982. He has focused his research in areas such as device modeling, integration and novel materials for non-volatile memories. His initial research was in high-K materials for GaAs MMICs which received acceptance in the market with over 500 million devices. His involvement with Ferroelectric non-volatile memories led to the discovery of high endurance materials from which non-volatile FeRAMs of over 100 billion erase/write cycles can be made. Over 1 billion FeRAMs have already entered the market using these novel materials based on bismuth compounds. Most of Dr. Paz de Araujo?s research in this area has been across national boundaries involving many engineers especially from Panasonic Corporation of Osaka, Japan.

Dr. Paz de Araujo is the recipient of the 2006 IEEE Daniel E. Noble Award ?For Fundamental Contributions and Commercialization in the Field of Ferroelectric Random Access Memory (FeRAM)?. He has received the American Electronics Association Outstanding Educator/Researcher of the Year, the IEEE Outstanding Branch Counselor, IEEE Fellow, and the Lifetime Achievement Award of the International Symposium on Integrated Ferroelectrics. He is the author or co-author of more than 290 papers and over180 U.S. and 220 foreign Patents.

Dr. Paz de Araujo and his wife, Maureen, reside in Colorado Springs, Colorado. They have three children, Mara, Alyssa and Daniel. His outside interests include philosophy, theology, traveling, and bridging areas between theory and applications in Electrical Engineering in which industry and academia can cooperate and innovate at a fundamental level.


Abstract

MATERIALS SCIENCE AND DEVICE TECHNOLOGY FROM LABORATORY TO REAL WORLD APPLICATIONS

Recently, research and development, in semiconductors devices and materials science in general, is under great pressure to produce innovations that can be translated into job creation and economic viability. In this talk, after more than 25 years pursuing several technologies that were directly transferred to industry, leading to over 1.5 Billion devices in the so called ?Real World?, I will review the steps and experiences that may be currently useful to the scientist/engineer entrepreneur. The formality of the innovation process in terms of theory, scientific value and practices will be emphasized as a basic first action to attain the value basis of the marketability of new ideas. Thus, the process of bringing a new material or novel component out of the lab involves deeper core competence in many interdisciplinary areas than generally viewed by the research community. With real world examples of qualification of beta units to large scale manufacturing, funding strategies and continuity beyond the first successful transfer will also be discussed. A special review of difficulties of creating value based research in a university environment, and the current call to arms to innovate for the betterment of society will be discussed with strategies to transform the current situation.















University of Colorado Colorado Springs and Symetrix Corporation


Monday 13th of August, Noon



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XXI INTERNATIONAL MATERIALS RESEARCH CONGRESS 2012
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