Atomic-Layer Deposition (ALD) conveys many benefits to the processing of ultra-thin films (down to one atomic layer), such as the control in the composition and physical thickness, high-degree of conformality (for covering complex 3D structures), among others. This symposium aims at covering fundamentals, physical properties (electronic, chemical, electrochemical, optical, magnetic, thermal and mechanical) as well as applications of ultra-thin films of metals, dielectrics and semiconductors deposited by ALD. Given that most ALD films are just a few nanometers in physical thickness, their composition and in general, their thermodynamic stability is quite dependent on the thermal processing (for diffusion or migration of atomic species, chemical interaction at the interface with the substrate, etc). Therefore, powerful analytical techniques are required for determining their properties (elemental composition, electronic and chemical state, atomic and molecular structure, chemical-bond densities, and surface or interface properties) and the effect of thermal treatments. Some of the analytical techniques employed to measure these properties are X-ray Photoelectron Spectroscopy (XPS), X-ray Fluorescence (XRF), X-ray Diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Fourier-Transform Infrared spectroscopy (FTIR), spectroscopic ellipsometry (at multiple wavelengths), etc. Usually, the former analyses are accompanied by electron microscopy studies (High-Resolution Transmission Electron Microscopy HR-TEM, Scanning Tunneling Microscopy STM, etc.) to visualize thermally-induced structural changes. The correlation of the data obtained a set of these techniques would enable the tailoring of the specific properties of these materials, in this way enhancing the performance (material to device level) for advanced applications (e.g., electronics, memory, optics, optoelectronics, sensing, thermal, chemical, catalytic and even corrosion resistant technologies). This session could enable direct interaction among researchers (in academy/industry) working in many areas including fundamental science, material research (material design and synthesis to characterization) and even technology development. The inclusion of this topic could make possible identifying exciting challenges and new opportunities in fundamental science and their applications promoting collaborations among researchers in both academy and industry.

Symposium Topics

  1. Fundamentals of ALD Science and Technology
  • Simulation, Modeling and Theory of ALD
  • Precursors and Chemistry
  • Surface Functionalization
  • Growth and Nucleation in the Ultra-Thin Regime
  • Novel Materials
  • Plasma-Enhanced ALD
  • Molecular Layer Deposition
  1. Characterization of ALD Materials and their Interfaces
  • X-ray based Spectroscopy (AR-XPS, XRD, XRF, EDS, etc)
  • Multiple Wavelength Spectroscopy (FTIR, Ellipsometry, etc)
  • Electron Microscopy (SEM, TEM, STM, etc)
  • Thermodynamic Stability of ALD Materials (bulk and interfaces)
  • Electrical and Reliability Characterization of ALD Materials
  • In-Situ Monitoring and Analysis
  • Other Physical Characterization (electronic, chemical, electrochemical, optical, magnetic, thermal, etc., properties)
  1. Applications of ALD Processes, Materials and Devices
  • Selective ALD Growth and Doping to the Atomic Level
  • Energy and Photocatalytic Applications
  • Catalysis and Corrosion Resistant Applications
  • Electronics Applications (FEOL and BEOL)
  • Memory Applications (Volatile and Non-Volatile)
  • Optic, Optoelectronic and Photonic Applications
  • Biological and Medical Applications
  • Other Applications (Chemical, Electrochemical, Magnetic, Thermal, Mechanical, etc)

Invited Speakers

Toshihide Nabatame (NIMS, Japan), Alberto Herrera (CINVESTAV, Mexico), Fernando Guarin (Global Foundries, USA).